Electrochemical Epitaxial Growth of TiO2/CdS/PbS Nanocables

Growth mechanisms of SnO(2)/Sn nanocables.

SnO(2)/Sn nanocables have been grown on single-crystal Si substrates by metal catalyst assisted thermal evaporation of SnO powders. The morphologies and structures of the prepared nanocables were determined on the basis of field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) spect...

GROWTH OF EPITAXIAL BaTiO

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...

Electrochemical Epitaxial Growth of a Pt(111) Phase on an Au(111) Electrode

MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Thin films of ZnS have been deposited by MOCVD on both BaTa206/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250-400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa...

Stochastic Models of Epitaxial Growth

We study theoretical aspects of step fluctuations on vicinal surfaces by adding conservative white noise to the Burton-Cabrera-Frank model in one spatial dimension. We consider material deposition from above, as well as entropic and elastic-dipole step repulsions. Two approaches are discussed: (i) the linearization of stochastic equations when fluctuations are small, which captures correlations...